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13RHBP SKIIP2 53290 MAN4610A MIP804 TFS112H MAX3161E FB1000L
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  0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 1SV251 features small-sized package facilitates high-density mounting and permits 1SV251-applied equipment to be made smaller. small interterminal capacitance (c=0.23pf typ). small forward series resistance (rs=4.5 max). absolute maximum ratings ta = 25 parameter symbol value unit reverse voltage v r 50 v forward current i f 50 ma allowable power dissipation p 150 mw junction temperature t j 125 storage temperature t stg -55to+125 electrical characteristics ta = 25 parameter symbol conditions min typ max unit reverse voltage v r i r =10 a 50 v reverse current i r v r =50v 0.1 a forward voltage v f i f =50ma 0.92 4.5 v interterminal capacitance c v r = 50 v, f = 1 mhz 0.23 pf series resistance rs i f = 10 ma, f = 100mhz note:the specifications shown above are for each individual diode. marking marking gv product specification sales@twtysemi.com 1 of 1 http://www.twtysemi.com 4008-318-123


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